Parallel cascode amplifier for enhanced low-power mode efficiency

ABSTRACT

In some embodiments, a power amplification system can comprise a current source, an input switch configured to alternatively feed current from the current source to a high-power circuit path and a low-power circuit path, and a band switch including a switch arm for switching between a plurality of bands. Each of the high-power circuit path and the low-power circuit path can be connected to the switch arm.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority to U.S. Provisional Application No.62/738,987 filed Sep. 28, 2018, entitled PARALLEL CASCODE AMPLIFIER FORENHANCED LOW-POWER MODE EFFICIENCY, the disclosure of which is herebyexpressly incorporated by reference herein in its respective entirety.

BACKGROUND Field

The present disclosure relates to power amplifier circuits, relateddevices, and related methods.

Description of the Related Art

A power amplifier is generally designed to provide maximum efficiency atthe maximum rated output power for the amplifier. The maximum outputpower for some third generation and/or fourth generation (3G/4G)amplifier systems is approximately 25 decibel-milliwatts (dBm) antennapower.

SUMMARY

In accordance with some implementations, the present disclosure relatesto a power amplification system comprising a current source, an inputswitch configured to alternatively feed current from the current sourceto a high-power circuit path and a low-power circuit path, and a bandswitch including a switch arm for switching between a plurality ofbands. Each of the high-power circuit path and the low-power circuitpath are connected to the switch arm.

In some embodiments, the low-power circuit path can include a firsttransistor and a second transistor. The first transistor can include afirst collector, a first emitter, and a first base. The secondtransistor can include a second collector, a second emitter, and asecond base. In some embodiments, the first emitter can be connected tothe second collector. In some embodiments, the first transistor can be acommon-base transistor and the second transistor is a common-emittertransistor. In some embodiments, the second base can be connected to theinput switch.

In some embodiments, the high-power circuit path can include a thirdtransistor and a fourth transistor. The third transistor can include athird collector, a third emitter, and a third base. The fourthtransistor can include a fourth collector, a fourth emitter, and afourth base. In some embodiments, each of the first collector and thethird collector can be connected to the switch arm. In some embodiments,the first collector can be connected to the third collector at a node.The node can be connected to the switch arm.

In some embodiments, the third emitter can be connected to the fourthcollector. In some embodiments, the third transistor can be acommon-base transistor and the fourth transistor can be a common-emittertransistor. In some embodiments, the fourth base can be connected to theinput switch.

In some teachings, the present disclosure relates to a method comprisingalternatively providing current, at an input switch, from a currentsource to a high-power circuit path or a low-power circuit path andswitching a switch arm of a band switch between a plurality of bandsbased on the current provided to the high-power circuit path or thelow-power circuit path. Each of the high-power circuit path and thelow-power circuit path is connected to the switch arm.

In some embodiments, the low-power circuit path can include a firsttransistor and a second transistor. The first transistor can include afirst collector, a first emitter, and a first base. The secondtransistor can include a second collector, a second emitter, and asecond base. In some embodiments, the first emitter can be connected tothe second collector. In some embodiments, the first transistor can be acommon-base transistor and the second transistor can be a common-emittertransistor. In some embodiments, the second base can be connected to theinput switch.

In some embodiments, the high-power circuit path can include a thirdtransistor and a fourth transistor. The third transistor can include athird collector, a third emitter, and a third base. The fourthtransistor can include a fourth collector, a fourth emitter, and afourth base. In some embodiments, each of the first collector and thethird collector can be connected to the switch arm. In some embodiments,the first collector can be connected to the third collector at a node.The node can be connected to the switch arm.

In some embodiments, the third emitter can be connected to the fourthcollector. In some embodiments, the third transistor can be acommon-base transistor and the fourth transistor can be a common-emittertransistor. In some embodiments, the fourth base can be connected to theinput switch.

In a number of implementations, the present disclosure relates to acircuit comprising a current source, an input switch configured toalternatively feed current from the current source to a high-powercircuit path and a low-power circuit path, and a band switch including aswitch arm for switching between a plurality of bands. Each of thehigh-power circuit path and the low-power circuit path are connected tothe switch arm.

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a power amplifier including a high-power mode stage, inaccordance with some embodiments.

FIG. 2 shows one embodiment of a multi-stage cascode power amplifierhaving a high-power mode stage and a low-power mode stage, the poweramplifier including separate switch arms for each stage in accordancewith some embodiments.

FIG. 3 shows another embodiment of a multi-stage cascode power amplifierhaving a high-power mode stage and a low-power mode stage, the poweramplifier including separate switch arms for each stage in accordancewith some embodiments.

FIG. 4 shows a multi-stage cascode power amplifier for connecting ahigh-power mode stage and a low-power mode stage to a single band switcharm, in accordance with some embodiments.

FIG. 5 shows another multi-stage cascode power amplifier for connectinga high-power mode stage and a low-power mode stage to a single bandswitch arm, in accordance with some embodiments.

FIG. 6 shows a process for limiting average current values at a poweramplifier that can be implemented with embodiments herein.

FIG. 7 shows a module including some or all of a front-end architecturehaving one or more features as described herein.

FIG. 8 depicts an example wireless device having one or moreadvantageous features described herein.

DESCRIPTION

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

A power amplifier is generally designed to provide maximum efficiency atthe maximum rated output power for the amplifier. The maximum outputpower for some third generation and/or fourth generation (3G/4G)amplifier systems is approximately 25 decibel-milliwatts (dBm) antennapower. However, some power amplifiers that are configured to operateefficiently at high power levels may be inefficient when operating atlow power levels (e.g., at 0 dBm antenna power). For example,specifications of the power amplifier, including the number of stages,amplifier transistor sizes, and/or bias networks, may be chosen tooptimize performance at high power levels (e.g., 25 dBm), leading tosignificant efficiency tradeoffs when operating at a lower power (e.g.,0 dBm).

Some power amplifiers (including some 3G/4G handset amplifiers) havemultiple gain stages to achieve a desired amount of gain between thetransceiver and antenna at the highest output power. To reduce thedynamic range requirement of the transceiver, it is desirable to havesignificantly reduced gain at lower output powers. For example, for somepower amplifiers it is desirable to have 25-30 dB gain at high power and10-15 dB gain at low power. It is also desirable to maintain efficientcurrent consumption at low output power levels with lower gain. However,10-15 dB gain at low power can be difficult to achieve on a multi-stagepower amplifier designed for 25-30 dB gain at high power.

One option for improving efficiency and lower gain at low output powerlevels involves reducing bias current within the power amplifier. Forexample, quiescent current levels may be reduced as much as possible tosupport a lower output power. However, reducing bias current can lead todegraded linearity of the power amplifier. Generally, the lower thecurrent that a power amplifier is operated at, the worse the linearityof the power amplifier. Moreover, particularly for power amplifiershaving multiple gain stages, lowering bias current may be ineffectivefor lowering the gain of the power amplifier. Accordingly, solutionsinvolving lowering bias current may also require incorporatingattenuation at the power amplifier in order to effectively reduce thegain, and attenuation may cause performance issues for the poweramplifier.

Some embodiments described herein provide enhanced high-power mode (HPM)and/or low-power mode (LPM) efficiency through use of cascode HPM and/orLPM stages. In some embodiments, each of a HPM stage and a LPM stage mayconnect to a single switch arm at a band switch. Some embodimentsinvolve connecting the switch arm to parallel HPM cascode and LPMcascodes. In this way, the number of switch arms at the band switch isminimized and the size of the power amplifier may be limited to allowefficient current consumption at low output power levels with lowergain.

FIG. 1 shows a power amplifier including a HPM stage, in accordance withsome embodiments. In the embodiment shown in FIG. 1, the amplifier 10includes a radio frequency (RF) input 11 that may deliver current to aninput matching circuit 12 including two series capacitors and a shuntinductor. A first stage of the power amplifier 10 may include acommon-emitter transistor 13 that may be connected to a driver matchingcircuit 14 between a driver stage and a final stage of the poweramplifier 10. The term “connected” is used herein according to its broadand ordinary meaning and may refer to a physical coupling or connectionbetween components of a circuit. A person having ordinary skill in theart will understand that a connection may refer to a connection to acommon wire and/or node.

A first bias source 15 may provide a base bias current for thecommon-emitter transistor 13 driver stage to set the quiescent current.The driver matching circuit 14 may include a supply inductor, a seriescapacitor, two shunt inductors, and a series inductor. The drivermatching circuit 14 may feed into a HPM cascode 16 comprising acommon-emitter transistor 17 and a common-base transistor 18. A secondbias source 19 may provide a base bias current for the final stage toset the quiescent current. The collector of the common-base transistor18 may be connected to a capacitor circuit 19 configured to provideharmonic termination to support the class of operation of the poweramplifier. An RF output 20 may feed a band switch through matchinginductance.

FIG. 2 shows one embodiment of a multi-stage cascode power amplifierhaving a HPM stage and a LPM stage, the power amplifier includingseparate switch arms for each stage in accordance with some embodiments.The power amplifier 25 may comprise a HPM stage 26 and a LPM stage 27.The HPM stage 26 may be optimized for higher power levels (e.g., 25 dBm)while the LPM stage 27 may be optimized for lower power levels (e.g., 0dBm). In some embodiments, the LPM stage 27 may be configured to reducecurrent at low power levels in order to reduce gain. The power amplifier25 may comprise a band switch 28 for switching between a plurality ofbands 29 (e.g., a 3G band, 4G band, etc.). In some embodiments, the HPMstage 26 may have an associated HPM switch arm 30 and the LPM stage 27may have an associated LPM switch arm 31 at the band switch 28. Duringhigh-power modes, the HPM stage 26 may be active while during low-powermodes, the LPM stage 27 may be active. In this way, HPM performance andLPM performance can be effectively decoupled to allow for optimizationof both modes. However, including multiple switch arms in the bandswitch 28 may require increased complexity, size, and/or cost of theband switch 28 and/or the power amplifier 25 relative to poweramplifiers comprising a single band switch arm.

In some embodiments, the band switch 28 may comprise multiple parallelsets of switch paths 32. For example, if there are two switch arms,there may be a set of switch paths 32 for each switch arm. In theexample shown in FIG. 2, there may be ten switch paths; five for the HPMswitch arm 30 and five for the LPM switch arm 31. Accordingly, as thenumber of bands 29 and/or switch arms increases, the size of the bandswitch 28 can increase exponentially, which can result in drasticincreases in size and/or cost of the power amplifier 25.

FIG. 3 shows another embodiment of a multi-stage cascode power amplifierhaving a HPM stage and a LPM stage, the power amplifier includingseparate switch arms for each stage in accordance with some embodiments.The power amplifier 35 may include a RF input 36 which may be fed into adedicated LPM stage 37. In some embodiments, the power amplifier 35 mayinclude a switch to connect the RF input to the LPM stage 37 and a HPMstage 38. The LPM stage 37 may include an input matching circuit 39which may feed into a common-emitter transistor 40. The collector of thecommon-emitter transistor may be connected to a supply voltage 41 via aninductor 42. The common-emitter transistor 40 may feed into a harmonictermination circuit 43 and provide an LPM output 44 to a band switch.The power amplifier 35 may further include HPM output 45 for the HPMstage 38 to the band switch. Accordingly, the band switch for the poweramplifier may include separate switch arms for the HPM stage 38 and theLPM stage 37, with one switch arm connected to the LPM output 44 andanother switch arm connected to the HPM output 45.

FIG. 4 shows a multi-stage cascode power amplifier for connecting a HPMstage and an LPM stage to a single band switch arm, in accordance withsome embodiments. The power amplifier 47 may comprise a HPM stage 48 anda LPM stage 49. In some embodiments, the power amplifier 47 may compriseadditional stages. The HPM stage 48 may be optimized for high power(e.g., 25 dBm) and the LPM stage 49 may be optimized for low power(e.g., 0-10 dBm). In some embodiments, the power amplifier 47 maycomprise an input switch 59 configured to alternatively supply currentfrom an RF input 56 source to the HPM stage 48 or the LPM stage 49.

The LPM stage 49 may include a LPM cascode 50 comprising a firstcommon-emitter transistor 51 and a first common-base transistor 52. Insome embodiments, the first common-emitter transistor 51 and the firstcommon-base transistor 52 may be in a cascode configuration, in whichthe collector of the first common-emitter transistor 51 is connected tothe emitter of the first common-base transistor 52.

In some embodiments, the HPM stage 48 includes a HPM cascode 53comprising a second common-emitter transistor 54 and a secondcommon-base transistor 55. The second common-emitter transistor 54 andthe second common-base transistor 55 may be in a cascode configurationin which the collector of the second common-emitter transistor 54 isconnected to the emitter of the second common-base transistor 55. Insome embodiments, the base of the first common-base transistor 52 and/orthe base of the second common-base transistor 55 may be coupled toground via a capacitor, as shown in FIG. 4.

In some embodiments, the base of the first common-emitter transistor 51may be connected to the input switch 59 which is connected to the RFinput 56. The collector of the first common-base transistor 52 may beconnected to the collector of the second common-base transistor 55, forexample at a node 60. As shown in FIG. 4, a network of inductors and/orcapacitors may be connected between the node 60 and the band switch 58.

The base of the second common-emitter transistor 54 may be connected toa battery voltage source (“VBATT”), the input switch 59, and/or to acollector of a third common-emitter transistor 57. The base of the thirdcommon-emitter transistor 57 may be connected to the input switch 59. Insome embodiments, each of the first common-emitter transistor 51, thefirst common-base transistor 52, the second common-emitter transistor54, the second common-base transistor 55, and the third common-emittertransistor 57 may be any type of transistor, for example a bipolarjunction transistor (BJT).

In the LPM configuration, the first common-base transistor 51 mayperform the function of a switch so that a designated LPM switch at theband switch 58 is not required. Rather, both of the first common-emittertransistor 52 and the second common-emitter transistor 55 may beconnected to a single switch arm 61. In this way, the size, cost, and/orcomplexity of the power amplifier 47 may be reduced relative to deviceshaving two or more switches at a band switch. Moreover, the LPM stage 49may provide limited loading at the HPM stage 48 without degrading theHPM stage 48. In some embodiments, the LPM stage 49 may act as asingle-stage amplifier. Accordingly, lower gain levels (e.g., 10-15 dB)may be achieved without linearity degradation.

In some embodiments, one or more of the first common-emitter transistor51, the first common-base transistor 52, the second common-emittertransistor 54, and the second common-base transistor 55 may comprise aplurality of transistors in parallel. For example, each of the firstcommon-emitter transistor 51 and the first common-base transistor 52 maycomprise two transistors in parallel while each of the secondcommon-base transistor 55 and the second common-emitter transistor 54may comprise eighteen transistors in parallel.

Switching between the HPM stage 48 and the LPM stage 49 may be performedat the input switch 59. The input switch 59 may be configured toalternatively supply current to the HPM stage 48 or the LPM stage 49. Insome embodiments, the LPM cascode 50 may be activated by switching theinput switch 59 such that bias current from the RF input 56 is fed tothe LPM stage 49 side. Similarly, the HPM cascode 53 may be activated byswitching the input switch 59 such that bias current from the RF input56 is fed to the HPM stage 48 side. If the first common-emittertransistor 51 is active, bias current may flow through the LPM stage 49.If the second common-emitter transistor 54 is active, bias current mayflow through the HPM stage 48. In some embodiments, voltage may beshared between the HPM cascode 53 and the LPM cascode 50.

FIG. 5 shows another multi-stage cascode power amplifier for connectinga HPM stage and an LPM stage to a single band switch arm, in accordancewith some embodiments. The power amplifier 65 comprises an RF input 66which may be fed alternatively into the HPM stage 67 or the LPM stage68. The LPM stage may comprise a matching circuit 69 and acommon-emitter transistor 70. The collector of the common-emittertransistor may feed into a LPM common-base transistor 71. The base ofthe LPM common-base transistor 71 may share a node with a HPMcommon-base transistor 72. By providing a source current to a first biassource 73, the LPM stage 68 may be activated and the common-emittertransistor 70 may conduct collector current, which may in turn activatethe LPM common-base transistor 71. When the LPM stage 68 is activated,there may be no current running through the HPM stage 67, resulting in ahigh isolation stage. Conversely, activating the HPM stage 67 may causequiescent current to pass through the HPM transistors. In this way,either stage may be selected based on where bias current is applied.Each of the HPM stage 67 and the LPM stage 68 may connect to a commonnode 74 which may connect to a switch arm at a band switch. Because bothstages connect to the same switch arm, only one switch arm may be neededat the band switch for the combined HPM stage 67 and the LPM stage 68.

FIG. 6 shows a process 600 for limiting average current values at apower amplifier that can be implemented with embodiments herein. Stepsof the process 600 may be performed in any order and in some cases stepsmay be removed and/or added as needed.

In block 602, a bias current may be generated. In some embodiments, thebias current may be fed through a switch to allow the bias current toflow through either a HPM stage or a LPM stage of a power amplifier.

In decision block 604, it may be determined whether the bias currentflows through the HPM stage or the LPM stage. If the bias current flowsthrough the HPM stage, the HPM stage may be active and the process 600continues to block 606. If the bias current flows through the LPM stage,the LPM stage may be active and the process 602 continues to block 608.

In block 606, a switch arm at a band switch may be controlled/managedbased on the HPM stage. In some embodiments, the switch arm may beconnected to the HPM stage at a collector of a common-base transistor ofthe HPM stage.

In block 608, the switch arm may be controlled/managed based on the LPMstage. In some embodiments, the switch arm may be connected to the LPMstage at a collector of a common-base transistor of the LPM stage.

FIG. 7 shows that in some embodiments, some or all of a front-endarchitecture having one or more features as described herein can beimplemented in a module. Such a module can be, for example, a front-endmodule (FEM). In the example of FIG. 7, a module 300 can include apackaging substrate 302, and a number of components can be mounted onsuch a packaging substrate. For example, a control component 102, apower amplifier assembly 104, an antenna tuner component 106, and aduplexer assembly 108 can be mounted and/or implemented on and/or withinthe packaging substrate 302. Other components such as a number of SMTdevices 304 and an antenna switch module (ASM) 306 can also be mountedon the packaging substrate 302. Although all of the various componentsare depicted as being laid out on the packaging substrate 302, it willbe understood that some component(s) can be implemented over othercomponent(s).

In some implementations, a device and/or a circuit having one or morefeatures described herein can be included in an RF device such as awireless device. Such a device and/or a circuit can be implementeddirectly in the wireless device, in a modular form as described herein,or in some combination thereof. In some embodiments, such a wirelessdevice can include, for example, a cellular phone, a smart-phone, ahand-held wireless device with or without phone functionality, awireless tablet, etc.

FIG. 8 depicts an example wireless device 400 having one or moreadvantageous features described herein. In the context of a modulehaving one or more features as described herein, such a module can begenerally depicted by a dashed box 300, and can be implemented as, forexample, a front-end module (FEM).

Referring to FIG. 8, power amplifiers 420 can receive their respectiveRF signals from a transceiver 410 that can be configured and operated inknown manners to generate RF signals to be amplified and transmitted,and to process received signals. The transceiver 410 is shown tointeract with a baseband sub-system 408 that is configured to provideconversion between data and/or voice signals suitable for a user and RFsignals suitable for the transceiver 410. The transceiver 410 can alsobe in communication with a power management component 406 that isconfigured to manage power for the operation of the wireless device 400.Such power management can also control operations of the basebandsub-system 408 and the module 300.

The baseband sub-system 408 is shown to be connected to a user interface402 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 408 can also beconnected to a memory 404 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In the example wireless device 400, outputs of the power amplifiers 420are shown to be routed to their respective duplexers 420. Such amplifiedand filtered signals can be routed to an antenna 416 through an antennaswitch 414 for transmission. In some embodiments, the duplexers 420 canallow transmit and receive operations to be performed simultaneouslyusing a common antenna (e.g., 416). In FIG. 8, received signals areshown to be routed to “Rx” paths (not shown) that can include, forexample, a low-noise amplifier (LNA).

As described herein, one or more features of the present disclosure canprovide a number of advantages when implemented in systems such as thoseinvolving the wireless device of FIG. 8. For example, a controller 102,which may or may not be part of the module 300, can monitor basecurrents associated with at least some of the power amplifiers 420.Based on such monitored base currents, an antenna tuner 106 (which mayor may not be part of the module 300), can be adjusted to provide adesired impedance to the corresponding power amplifier.

The present disclosure describes various features, no single one ofwhich is solely responsible for the benefits described herein. It willbe understood that various features described herein may be combined,modified, or omitted, as would be apparent to one of ordinary skill.Other combinations and sub-combinations than those specificallydescribed herein will be apparent to one of ordinary skill, and areintended to form a part of this disclosure. Various methods aredescribed herein in connection with various flowchart steps and/orphases. It will be understood that in many cases, certain steps and/orphases may be combined together such that multiple steps and/or phasesshown in the flowcharts can be performed as a single step and/or phase.Also, certain steps and/or phases can be broken into additionalsub-components to be performed separately. In some instances, the orderof the steps and/or phases can be rearranged and certain steps and/orphases may be omitted entirely. Also, the methods described herein areto be understood to be open-ended, such that additional steps and/orphases to those shown and described herein can also be performed.

Some aspects of the systems and methods described herein canadvantageously be implemented using, for example, computer software,hardware, firmware, or any combination of computer software, hardware,and firmware. Computer software can comprise computer executable codestored in a computer readable medium (e.g., non-transitory computerreadable medium) that, when executed, performs the functions describedherein. In some embodiments, computer-executable code is executed by oneor more general purpose computer processors. A skilled artisan willappreciate, in light of this disclosure, that any feature or functionthat can be implemented using software to be executed on a generalpurpose computer can also be implemented using a different combinationof hardware, software, or firmware. For example, such a module can beimplemented completely in hardware using a combination of integratedcircuits. Alternatively or additionally, such a feature or function canbe implemented completely or partially using specialized computersdesigned to perform the particular functions described herein ratherthan by general purpose computers.

Multiple distributed computing devices can be substituted for any onecomputing device described herein. In such distributed embodiments, thefunctions of the one computing device are distributed (e.g., over anetwork) such that some functions are performed on each of thedistributed computing devices.

Some embodiments may be described with reference to equations,algorithms, and/or flowchart illustrations. These methods may beimplemented using computer program instructions executable on one ormore computers. These methods may also be implemented as computerprogram products either separately, or as a component of an apparatus orsystem. In this regard, each equation, algorithm, block, or step of aflowchart, and combinations thereof, may be implemented by hardware,firmware, and/or software including one or more computer programinstructions embodied in computer-readable program code logic. As willbe appreciated, any such computer program instructions may be loadedonto one or more computers, including without limitation a generalpurpose computer or special purpose computer, or other programmableprocessing apparatus to produce a machine, such that the computerprogram instructions which execute on the computer(s) or otherprogrammable processing device(s) implement the functions specified inthe equations, algorithms, and/or flowcharts. It will also be understoodthat each equation, algorithm, and/or block in flowchart illustrations,and combinations thereof, may be implemented by special purposehardware-based computer systems which perform the specified functions orsteps, or combinations of special purpose hardware and computer-readableprogram code logic means.

Furthermore, computer program instructions, such as embodied incomputer-readable program code logic, may also be stored in a computerreadable memory (e.g., a non-transitory computer readable medium) thatcan direct one or more computers or other programmable processingdevices to function in a particular manner, such that the instructionsstored in the computer-readable memory implement the function(s)specified in the block(s) of the flowchart(s). The computer programinstructions may also be loaded onto one or more computers or otherprogrammable computing devices to cause a series of operational steps tobe performed on the one or more computers or other programmablecomputing devices to produce a computer-implemented process such thatthe instructions which execute on the computer or other programmableprocessing apparatus provide steps for implementing the functionsspecified in the equation(s), algorithm(s), and/or block(s) of theflowchart(s).

Some or all of the methods and tasks described herein may be performedand fully automated by a computer system. The computer system may, insome cases, include multiple distinct computers or computing devices(e.g., physical servers, workstations, storage arrays, etc.) thatcommunicate and interoperate over a network to perform the describedfunctions. Each such computing device typically includes a processor (ormultiple processors) that executes program instructions or modulesstored in a memory or other non-transitory computer-readable storagemedium or device. The various functions disclosed herein may be embodiedin such program instructions, although some or all of the disclosedfunctions may alternatively be implemented in application-specificcircuitry (e.g., ASICs or FPGAs) of the computer system. Where thecomputer system includes multiple computing devices, these devices may,but need not, be co-located. The results of the disclosed methods andtasks may be persistently stored by transforming physical storagedevices, such as solid state memory chips and/or magnetic disks, into adifferent state.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Detailed Description using thesingular or plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list. The word “exemplary” is usedexclusively herein to mean “serving as an example, instance, orillustration.” Any implementation described herein as “exemplary” is notnecessarily to be construed as preferred or advantageous over otherimplementations.

The disclosure is not intended to be limited to the implementationsshown herein. Various modifications to the implementations described inthis disclosure may be readily apparent to those skilled in the art, andthe generic principles defined herein may be applied to otherimplementations without departing from the spirit or scope of thisdisclosure. The teachings of the invention provided herein can beapplied to other methods and systems, and are not limited to the methodsand systems described above, and elements and acts of the variousembodiments described above can be combined to provide furtherembodiments. Accordingly, the novel methods and systems described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the disclosure. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the disclosure.

What is claimed is:
 1. A power amplification system comprising: acurrent source; an input switch configured to alternatively feed currentfrom the current source to a high-power circuit path and a low-powercircuit path, the high-power circuit path including a first transistorincluding a first collector, a first emitter, and a first base, a secondtransistor including a second collector, a second emitter, and a secondbase, and a third transistor including a third collector, a thirdemitter, and a third base, the first base being coupled to the thirdbase, the second collector being coupled to the third emitter; and aband switch including a switch arm for switching between a plurality ofbands, each of the first collector, the third collector, and thelow-power circuit path being connected to the switch arm.
 2. The poweramplification system of claim 1, wherein the low-power circuit pathincludes a fourth transistor, the fourth transistor including a fourthcollector, a fourth emitter, and a fourth base.
 3. The poweramplification system of claim 2, wherein the first emitter is connectedto the fourth collector.
 4. The power amplification system of claim 2,wherein the first transistor is a common-base transistor and the fourthtransistor is a common-emitter transistor.
 5. The power amplificationsystem of claim 2, wherein the fourth base is connected to the inputswitch.
 6. The power amplification system of claim 1, wherein the firstcollector is connected to the third collector at a node, and wherein thenode is connected to the switch arm.
 7. The power amplification systemof claim 1, wherein the third transistor is a common-base transistor andthe second transistor is a common-emitter transistor.
 8. The poweramplification system of claim 1, wherein the second base is connected tothe input switch via a fourth transistor.
 9. A method comprising:alternatively providing current, at an input switch, from a currentsource to a high-power circuit path or a low-power circuit path, thehigh-power circuit path including a first transistor including a firstcollector, a first emitter, and a first base, a second transistorincluding a second collector, a second emitter, and a second base, and athird transistor including a third collector, a third emitter, and athird base, the first base being coupled to the third base, the secondcollector being coupled to the third emitter; and switching a switch armof a band switch between a plurality of bands based on the currentprovided to the high-power circuit path or the low-power circuit path,each of the first collector, the third collector, and the low-powercircuit path being connected to the switch arm.
 10. The method of claim9, wherein the low-power circuit path includes a fourth transistor, thefourth transistor including a fourth collector, a fourth emitter, and afourth base.
 11. The method of claim 10, wherein the first emitter isconnected to the fourth collector.
 12. The method of claim 10, whereinthe first transistor is a common-base transistor and the fourthtransistor is a common-emitter transistor.
 13. The method of claim 10,wherein the fourth base is connected to the input switch.
 14. A circuitcomprising: a current source; an input switch configured toalternatively feed current from the current source to a high-powercircuit path and a low-power circuit path, the high-power circuit pathincluding a first transistor including a first collector, a firstemitter, and a first base, a second transistor including a secondcollector, a second emitter, and a second base, and a third transistorincluding a third collector, a third emitter, and a third base, thefirst base being coupled to the third base, the second collector beingcoupled to the third emitter; and a band switch including a switch armfor switching between a plurality of bands, each of the first collector,the third collector, and the low-power circuit path being connected tothe switch arm.